Magnetic Random Access Memory

Magnetic Random Access Memory

Abstract
The development of MRAM has been based on a number of significant ideas over the past 20 years, starting with Cross-tie Random Access Memory and continuing with new configurations using first Anisotropic Magnetoresistance(AMR) materials and then using higher sensitivity Giant Magnetoresistanc(GMR) and Spin Dependent Tunneling (SDT) materials. A brief introduction on precursors to magnetoresistive random access memory (MRAM) is followed by a description of an early MRAM, and then descriptions of cell configurations with improved signal levels including MRAM cells with GMR materials, Pseudo-Spin Valve (PSV) cells, and cells using SDT structures.

My seminar topic will discuss about principle of operation, reading & writing selection schemes, MRAM architecture, stability of MRAM, comparison between different RAM technologies. Also, discuss about it’s applications, conclusion and what’s the future holds.