Future generation high-performance radio communications circuits in gallium nitride technology

Future generation high-performance radio communications
circuits in gallium nitride technology

Abstract

Microwave transistors based on gallium nitride (GaN) are an exciting new technology that holds the promise of high power densities, high supply voltages and easy matching. GaN transistors have recently become commercially available with the industry poised to explode in the not too distant future. There are, however, a number of issues with this relatively immature technology that are limiting their uptake. These limitations include a high number of defects in the crystal lattice and difficulties in dissipating the heat generated by these devices. This presentation will give an overview of GaN transistors and present some of my recent results.