EXTREME ULTRAVIOLET LITHOGRAPHY

EXTREME ULTRAVIOLET LITHOGRAPHY

Abstract:

EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometers (nm) to carry out projection imaging.

Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the high-volume manufacture of integrated circuits. It is widely anticipated that improvements in this technology will allow it to remain the semiconductor industry's workhorse through the 100 nm generation of devices. However, some time around the year 2005, so-called Next-Generation Lithographies will be required. EUVL is one such technology vying to become the successor to optical lithography. This topic provides an overview of the capabilities of EUVL, and explains how EUVL might be implemented. The challenges that must be overcome in order for EUVL to qualify for high-volume manufacture are also discussed.


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